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Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering
Zheng, LP(郑里平); Qiu, S(邱实); Li, SY
1999
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume143Issue:40912Pages:215
AbstractNonstoichiometric effects in the zero-fluence sputtering of a natural Cu(111) target (69.1% Cu-63, 30.9% Cu-65) irradiated with normally incident Ar+ ions from 50 to 1000 eV have been studied by use of a molecular dynamics (MD) simulation code. Calculations show that the isotopic ratios in the normal direction and at oblique angles, their difference, and the total isotopic ratio increase as the bombarding energy decreases. (C) 1999 Elsevier Science B.V. All rights reserved.
Indexed BySCI
Funding Project应物所项目组
WOS IDWOS:000080074200027
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10063
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Zheng, LP,Qiu, S,Li, SY. Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering[J]. APPLIED SURFACE SCIENCE,1999,143(40912):215.
APA Zheng, LP,Qiu, S,&Li, SY.(1999).Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering.APPLIED SURFACE SCIENCE,143(40912),215.
MLA Zheng, LP,et al."Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering".APPLIED SURFACE SCIENCE 143.40912(1999):215.
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