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Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy | |
Men, LQ; Gan, FX; Sun, JL; Li, MQ(李民乾) | |
1997 | |
Source Publication | APPLIED SURFACE SCIENCE
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ISSN | 0169-4332 |
Volume | 120Issue:40910Pages:171 |
Abstract | Atomic force microscopy (AFM) was used to study the microstructure of short-wavelength recorded pits in GeSb2Te4 phase change thin film. Microarea morphology images show that the recorded domain bulges after laser irradiation, With the increase of writing pulse width, a depression appears in the center of the recorded pits, It is demonstrated that AFM is a very useful tool to evaluate the recorded pits and improve the performance of phase change media. (C) 1997 Elsevier Science B.V. |
Indexed By | SCI |
Language | 英语 |
Funding Project | 应物所项目组 |
Document Type | 期刊论文 |
Identifier | http://ir.sinap.ac.cn/handle/331007/10085 |
Collection | 中科院上海原子核所2003年前 |
Recommended Citation GB/T 7714 | Men, LQ,Gan, FX,Sun, JL,et al. Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy[J]. APPLIED SURFACE SCIENCE,1997,120(40910):171. |
APA | Men, LQ,Gan, FX,Sun, JL,&Li, MQ.(1997).Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy.APPLIED SURFACE SCIENCE,120(40910),171. |
MLA | Men, LQ,et al."Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy".APPLIED SURFACE SCIENCE 120.40910(1997):171. |
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