CAS OpenIR  > 中科院上海原子核所2003年前
Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy
Men, LQ; Gan, FX; Sun, JL; Li, MQ(李民乾)
1997
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume120Issue:40910Pages:171
AbstractAtomic force microscopy (AFM) was used to study the microstructure of short-wavelength recorded pits in GeSb2Te4 phase change thin film. Microarea morphology images show that the recorded domain bulges after laser irradiation, With the increase of writing pulse width, a depression appears in the center of the recorded pits, It is demonstrated that AFM is a very useful tool to evaluate the recorded pits and improve the performance of phase change media. (C) 1997 Elsevier Science B.V.
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10085
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Men, LQ,Gan, FX,Sun, JL,et al. Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy[J]. APPLIED SURFACE SCIENCE,1997,120(40910):171.
APA Men, LQ,Gan, FX,Sun, JL,&Li, MQ.(1997).Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy.APPLIED SURFACE SCIENCE,120(40910),171.
MLA Men, LQ,et al."Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy".APPLIED SURFACE SCIENCE 120.40910(1997):171.
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