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Preliminary experimental results of deep levels for dielectronic recombination in He-like high-Z ions at Heidelberg electron beam ion trap
Zhang, XM; Guo, PL(郭盘林); Gonzalez, A; Crespo, J
2003
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume20Issue:5Pages:657
AbstractAn experimental system for dielectronic recombination was set-up on H-EBIT in order to carry out dielectronic recombination study. Some preliminary results of He-like Ge32+ and Cu27+ are obtained. Space charge shift on determination of the resonance position for Ge32+ at 100mA is around 18% and that for Cu27+ is around 38%. Further analysis of experimental data is in progress.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000182922700019
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10110
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Zhang, XM,Guo, PL,Gonzalez, A,et al. Preliminary experimental results of deep levels for dielectronic recombination in He-like high-Z ions at Heidelberg electron beam ion trap[J]. CHINESE PHYSICS LETTERS,2003,20(5):657.
APA Zhang, XM,Guo, PL,Gonzalez, A,&Crespo, J.(2003).Preliminary experimental results of deep levels for dielectronic recombination in He-like high-Z ions at Heidelberg electron beam ion trap.CHINESE PHYSICS LETTERS,20(5),657.
MLA Zhang, XM,et al."Preliminary experimental results of deep levels for dielectronic recombination in He-like high-Z ions at Heidelberg electron beam ion trap".CHINESE PHYSICS LETTERS 20.5(2003):657.
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