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| Recrystallization behavior of high-dose Mn+-implanted GaAs | |
| Wang, J（王健）; Li, Z; Cai, W; Miao, Z; Chen, X; Lu, W | |
| 2003 | |
| Source Publication | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| ISSN | 0947-8396 |
| Volume | 76Issue:6Pages:975 |
| Abstract | Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn+-implanted GaAs. A high dose of Mn+-ions (> 10(15) cm(-2)) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 degreesC was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation (> 1.6 x 10(15) cm(-2)) and annealing. The size of the recrystallized crystallites decreased with increasing Mn+ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency-of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses (> 7 x 10(16) cm(-2)), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals. |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 应物所项目组 |
| WOS ID | WOS:000182493700025 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/10144 |
| Collection | 中科院上海原子核所2003年前 |
| Recommended Citation GB/T 7714 | Wang, J,Li, Z,Cai, W,et al. Recrystallization behavior of high-dose Mn+-implanted GaAs[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2003,76(6):975. |
| APA | Wang, J,Li, Z,Cai, W,Miao, Z,Chen, X,&Lu, W.(2003).Recrystallization behavior of high-dose Mn+-implanted GaAs.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,76(6),975. |
| MLA | Wang, J,et al."Recrystallization behavior of high-dose Mn+-implanted GaAs".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 76.6(2003):975. |
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