CAS OpenIR  > 中科院上海原子核所2003年前
Recrystallization behavior of high-dose Mn+-implanted GaAs
Wang, J(王健); Li, Z; Cai, W; Miao, Z; Chen, X; Lu, W
2003
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN0947-8396
Volume76Issue:6Pages:975
AbstractRaman spectroscopy was used to study the evolution of host lattice recrystallization in Mn+-implanted GaAs. A high dose of Mn+-ions (> 10(15) cm(-2)) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 degreesC was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation (> 1.6 x 10(15) cm(-2)) and annealing. The size of the recrystallized crystallites decreased with increasing Mn+ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency-of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses (> 7 x 10(16) cm(-2)), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000182493700025
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10144
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Wang, J,Li, Z,Cai, W,et al. Recrystallization behavior of high-dose Mn+-implanted GaAs[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2003,76(6):975.
APA Wang, J,Li, Z,Cai, W,Miao, Z,Chen, X,&Lu, W.(2003).Recrystallization behavior of high-dose Mn+-implanted GaAs.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,76(6),975.
MLA Wang, J,et al."Recrystallization behavior of high-dose Mn+-implanted GaAs".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 76.6(2003):975.
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