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Structure of post-annealed ferroelectric PbZrxTi1-xO3 and SrBi2Ta2O9 thin films
Gao, JX; Liu, EJ; Zhang, ZB(张志滨); Cao, JQ(曹建清); Zeng, AP
2003
Source PublicationTHIN SOLID FILMS
ISSN0040-6090
Volume424Issue:1Pages:79
AbstractIn order to fabricate good quality ferroelectric thin films, PbZrxTi(1-x)O3 (PZT) and SrBi2Ta2O9 (SBT) films were fabricated on SiO2/Si(100) substrates and on Pt/Ti/SiO2/Si(100) substrates by pulsed laser excimer deposition (PLD). X-ray diffraction, Rutherford backscattering analysis, and atomic force microscopy were used to characterize the structural properties of the samples, which were post-annealed at different temperatures. The results showed that the PZT and SBT films fabricated on Pt/Ti/SiO2/Si(100) substrates and annealed at 700 degreesC exhibited optimum properties. (C) 2002 Elsevier Science B.V. All rights reserved.
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10176
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Gao, JX,Liu, EJ,Zhang, ZB,et al. Structure of post-annealed ferroelectric PbZrxTi1-xO3 and SrBi2Ta2O9 thin films[J]. THIN SOLID FILMS,2003,424(1):79.
APA Gao, JX,Liu, EJ,Zhang, ZB,Cao, JQ,&Zeng, AP.(2003).Structure of post-annealed ferroelectric PbZrxTi1-xO3 and SrBi2Ta2O9 thin films.THIN SOLID FILMS,424(1),79.
MLA Gao, JX,et al."Structure of post-annealed ferroelectric PbZrxTi1-xO3 and SrBi2Ta2O9 thin films".THIN SOLID FILMS 424.1(2003):79.
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