CAS OpenIR  > 中科院上海原子核所2003年前
Study of the ion implantation of Sn-119 in a-Si1-xCx : H
Barancira, T; Moons, R; Koops, GEJ; Deweerd, W; Pattyn, H; Tzenov, N; Tzolov, M; Dimova-Malinovska, D; Tsvetkova, T; Venegas, R; Zhang, GL(张桂林)
1999
Source PublicationJOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN0022-3093
Volume244Issue:40942Pages:189
AbstractThe Mossbauer spectroscopy and Rutherford backscattering spectroscopy studies presented here allow an investigation of the origins of the previously observed changes in optical absorption in sputter deposited a-Si1-xCx:H films caused by high dose Sn implantations. To this end, we investigate the microscopic surroundings and the bonding structures of the Sn atoms. At doses up to 1 x 10(17) cm(-2) a major fraction of Sn takes a quasi-substitutional site, sp(3) bonded to four Si neighbours, while a smaller fraction is present as Sn2+, presumably due to SnO formation. The latter fraction increases at the higher doses and the increase is paralleled by the formation of Sn4+ and a prominent metallic sn component. This beta-Sn fraction, presumably in the form of nanosized precipitates, becomes dominant at the higher doses, thus explaining the complete lack of optical transmission. (C) 1999 Elsevier Science B.V. All rights reserved.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000079509900010
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10189
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Barancira, T,Moons, R,Koops, GEJ,et al. Study of the ion implantation of Sn-119 in a-Si1-xCx : H[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,1999,244(40942):189.
APA Barancira, T.,Moons, R.,Koops, GEJ.,Deweerd, W.,Pattyn, H.,...&Zhang, GL.(1999).Study of the ion implantation of Sn-119 in a-Si1-xCx : H.JOURNAL OF NON-CRYSTALLINE SOLIDS,244(40942),189.
MLA Barancira, T,et al."Study of the ion implantation of Sn-119 in a-Si1-xCx : H".JOURNAL OF NON-CRYSTALLINE SOLIDS 244.40942(1999):189.
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