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Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy
Chen, CB; Lu, W; Miao, ZL; Li, ZF; Cai, WY; Shen, XC; Chen, CM(陈明昌); Zhu, DZ(朱德彰); Hu, J(胡钧); Li, MQ(李民乾)
2002
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume51Issue:3Pages:659
AbstractThe intermixing induced by ion-implantation on a series of comparable asymmetrical-coupled GaAs/AlGaAs quantum-well samples have been studied by photoluminescence(PL) spectra measurements. The results of the PL spectra and the calculation based on effective mass approximation theory show that the proton implantation is the dominate process for Al diffusion across the heterointerfaces. The main effect of rapid thermal annealing is to remove the non-radiative centre.
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10196
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Chen, CB,Lu, W,Miao, ZL,et al. Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy[J]. ACTA PHYSICA SINICA,2002,51(3):659.
APA Chen, CB.,Lu, W.,Miao, ZL.,Li, ZF.,Cai, WY.,...&Li, MQ.(2002).Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy.ACTA PHYSICA SINICA,51(3),659.
MLA Chen, CB,et al."Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy".ACTA PHYSICA SINICA 51.3(2002):659.
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