CAS OpenIR  > 中科院上海原子核所2003年前
The study of damaged layer induced by Ar+ irradiation in plasma-polymerized thiophene film
Tong, ZS; Pu, TS; Wu, MZ; Zhang, ZY; Zhang, J; Jin, RP; Zhu, DZ(朱德彰); Cao, DX(曹德新); Zhu, FY; Cao, JQ(曹建清)
1996
Source PublicationSYNTHETIC METALS
ISSN0379-6779
Volume79Issue:2Pages:85
AbstractA dense organic film was prepared by plasma polymerization from thiophene. 100 keV Ar+ irradiation at a fluence of 5 x 10(15) ions cm(-2) was used to produce a conducting layer due to damage. The characteristics of the damaged layer have been explored on the basis of studies on the optical properties and carrier transport.
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10230
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Tong, ZS,Pu, TS,Wu, MZ,et al. The study of damaged layer induced by Ar+ irradiation in plasma-polymerized thiophene film[J]. SYNTHETIC METALS,1996,79(2):85.
APA Tong, ZS.,Pu, TS.,Wu, MZ.,Zhang, ZY.,Zhang, J.,...&Cao, JQ.(1996).The study of damaged layer induced by Ar+ irradiation in plasma-polymerized thiophene film.SYNTHETIC METALS,79(2),85.
MLA Tong, ZS,et al."The study of damaged layer induced by Ar+ irradiation in plasma-polymerized thiophene film".SYNTHETIC METALS 79.2(1996):85.
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