CAS OpenIR  > 中科院上海原子核所2003年前
Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method
Gao, JX; Zheng, LR; Huang, BP; Song, ZT; Yang, LX; Fan, YJ; Zhu, DZ(朱德彰); Lin, CL
1999
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume14Issue:9Pages:836
AbstractIn order to study total dose radiation effects of PbZrxTi1-xO3 (PZT) film made with the pulsed excimer laser deposition (PLD) technique, hysteresis loops and capacitance-voltage (C-V) curves of PZT film capacitors have been measured before and after gamma-ray irradiation. The results show that, in a range of 0-2 x 10(5) Gy (Si), with increasing total dose, the remanent polarization 2P(r) increased while dielectric constant epsilon decreased. This can be explained by charges trapped by some defects during irradiation.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000082864400015
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10247
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
Gao, JX,Zheng, LR,Huang, BP,et al. Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1999,14(9):836.
APA Gao, JX.,Zheng, LR.,Huang, BP.,Song, ZT.,Yang, LX.,...&Lin, CL.(1999).Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,14(9),836.
MLA Gao, JX,et al."Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14.9(1999):836.
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