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侧向离子束诱导电荷显微分析技术
陆荣荣; 裘惠源; 曹建清
Date Available2013-01-23
Country中国
Subtype发明专利
Abstract本发明公开一种侧向离子束诱导电荷显微分析 技术,用于测量半导体器件的微区电学特性,主要包括以下步 骤:提供一微米MeV的离子束;将该离子束沿半导体器件侧 面入射在该器件上;收集并分析由该离子束诱导产生的载流子 脉冲信号。本发明微米离子束从半导体器件电极的侧面入射, 所以避免了电荷漏斗效应,而且采用fA量级低离子束流,从 而根本上克服了MeV离子束对分析器件带来的损伤问题。
Subject AreaH01l21/66 ; G01r31/26 ; G01r31/28
Funding Project应物所课题组
Language中文
Status20071017 发明专利申请公布后的视为撤回
Application NumberCN03129326
Patent Agent肖剑南
Document Type专利
Identifierhttp://ir.sinap.ac.cn/handle/331007/10398
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
陆荣荣,裘惠源,曹建清. 侧向离子束诱导电荷显微分析技术.
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