CAS OpenIR  > 中科院上海原子核所2003年前
~(123)I靶子材料中杂质元素的ICP光谱分析
黄宗枝; 方企嫈; 周洪弟
1983-05-01
Source Publication核技术
Issue04
Abstract<正> ~(123)I为一种优质核素、具有较~(131)I更为合适的半衰期(13.2小时);无β粒子发射;γ能量适中(159keV);近十年来已在诊疗中取代了~(131)I。~(123)I制备法有直接和间接两种;前者以粒子轰击靶子制得。如~(121)Sb(α、2n)~(123)I;~(122)Te(d、n)~(123)I;~(123)Te(P、n)~(123)I等等。间接法则由粒子束轰击靶子物先制得~(121)Xe(T_(1/2)2.1小时);再经β~+衰变制~(123)I。本所采用α粒子束轰击超纯锑靶;直接制取~(123)I、在核素制备过程中;锑靶纯度直接影响~(123)I的性质;有必要对锑靶痕量元素分析。我们采用ICP光谱法分析了电镀锑靶片;满足了制备的要求。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10686
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
黄宗枝,方企嫈,周洪弟. ~(123)I靶子材料中杂质元素的ICP光谱分析[J]. 核技术,1983(04).
APA 黄宗枝,方企嫈,&周洪弟.(1983).~(123)I靶子材料中杂质元素的ICP光谱分析.核技术(04).
MLA 黄宗枝,et al."~(123)I靶子材料中杂质元素的ICP光谱分析".核技术 .04(1983).
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