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~(28)Si_n~-(n=1;2)离子对Ag表面的溅射研究
王震遐; 潘冀生; 章骥平; 陶振兰; 杜光天; 王传珊; 李欣年; 谢诒芬
1995-05-30
Source Publication物理学报
Issue05
Abstract用原子捕获膜技术结合卢瑟福背散射谱;测定了具有相同原子能量(16keV/原子)的~(25)Si_m~-(n=1;2)离子冲击Ag靶的溅射原子角分布。结果表明;~(26)Si_1~-冲击引起的Ag原子角分布较~(25)Si_2~-冲击在小发射角θ(Ag原子发射方向与靶表面法线方向之间的夹角)区有更大的增强。结合扫描电子显微镜对靶点表面的分析;我们认为这种角分布变化;可能暗示必须考虑靶点表面形貌特征差别的影响。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10736
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714		 王震遐,潘冀生,章骥平,等. ~(28)Si_n~-(n=1;2)离子对Ag表面的溅射研究[J]. 物理学报,1995(05).
APA 王震遐.,潘冀生.,章骥平.,陶振兰.,杜光天.,...&谢诒芬.(1995).~(28)Si_n~-(n=1;2)离子对Ag表面的溅射研究.物理学报(05).
MLA 王震遐,et al."~(28)Si_n~-(n=1;2)离子对Ag表面的溅射研究".物理学报 .05(1995).
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