CAS OpenIR  > 中科院上海原子核所2003年前
1.56MeV Sb~+注入单晶硅的反常退火行为
高剑侠; 朱德彰; 曹德新; 周祖尧; 赵国庆
1994-01-10
Source Publication核技术
Issue01
Abstract剂量为2×10(13)-5×10(15)cm(-2)的1.56MeVSb+注入Si(100)后;向石英炉中通入流动纯Ar气进行热退火(退火温度为500一1050℃;时间为30min)。采用3MeVHe(2+)卢瑟福背散射/沟道技术和透射电镜技术测量样品的注人损伤以及退火特性;结合计算机模拟数据;结果表明:缺陷的产生类型与注入离子的剂量、样品退火温度密切相关。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10794
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
高剑侠,朱德彰,曹德新,等. 1.56MeV Sb~+注入单晶硅的反常退火行为[J]. 核技术,1994(01).
APA 高剑侠,朱德彰,曹德新,周祖尧,&赵国庆.(1994).1.56MeV Sb~+注入单晶硅的反常退火行为.核技术(01).
MLA 高剑侠,et al."1.56MeV Sb~+注入单晶硅的反常退火行为".核技术 .01(1994).
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