1．56MeV　Sb~＋注入单晶硅的反常退火行为

CAS OpenIR > 中科院上海原子核所2003年前

	1．56MeV　Sb~＋注入单晶硅的反常退火行为
	高剑侠; 朱德彰; 曹德新; 周祖尧; 赵国庆
	1994-01-10
Source Publication	核技术
Issue	01
Abstract	剂量为２×１０（１３）－５×１０（１５）ｃｍ（－２）的１．５６ＭｅＶＳｂ＋注入Ｓｉ（１００）后;向石英炉中通入流动纯Ａｒ气进行热退火（退火温度为５００一１０５０℃;时间为３０ｍｉｎ）。采用３ＭｅＶＨｅ（２＋）卢瑟福背散射／沟道技术和透射电镜技术测量样品的注人损伤以及退火特性;结合计算机模拟数据;结果表明：缺陷的产生类型与注入离子的剂量、样品退火温度密切相关。
Indexed By	CNKI
Language	中文
Funding Project	原子核所项目组
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/10794
Collection	中科院上海原子核所2003年前
Recommended Citation GB/T 7714	高剑侠,朱德彰,曹德新,等. 1．56MeV　Sb~＋注入单晶硅的反常退火行为[J]. 核技术,1994(01).
APA	高剑侠,朱德彰,曹德新,周祖尧,&赵国庆.(1994).1．56MeV　Sb~＋注入单晶硅的反常退火行为.核技术(01).
MLA	高剑侠,et al."1．56MeV　Sb~＋注入单晶硅的反常退火行为".核技术 .01(1994).

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