Chinese | English
CAS OpenIR  > 中科院上海原子核所2003年前
1．56MeV　Sb~＋注入单晶硅的反常退火行为
高剑侠; 朱德彰; 曹德新; 周祖尧; 赵国庆
1994-01-10
Source Publication核技术
Issue01
Abstract剂量为２×１０（１３）－５×１０（１５）ｃｍ（－２）的１．５６ＭｅＶＳｂ＋注入Ｓｉ（１００）后;向石英炉中通入流动纯Ａｒ气进行热退火（退火温度为５００一１０５０℃;时间为３０ｍｉｎ）。采用３ＭｅＶＨｅ（２＋）卢瑟福背散射／沟道技术和透射电镜技术测量样品的注人损伤以及退火特性;结合计算机模拟数据;结果表明：缺陷的产生类型与注入离子的剂量、样品退火温度密切相关。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10794
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714		 高剑侠,朱德彰,曹德新,等. 1．56MeV　Sb~＋注入单晶硅的反常退火行为[J]. 核技术,1994(01).
APA 高剑侠,朱德彰,曹德新,周祖尧,&赵国庆.(1994).1．56MeV　Sb~＋注入单晶硅的反常退火行为.核技术(01).
MLA 高剑侠,et al."1．56MeV　Sb~＋注入单晶硅的反常退火行为".核技术 .01(1994).
Files in This Item:
File Name/Size DocType Version Access License
1．56MeV　Sb~＋注入单晶硅的反常（355KB） 开放获取LicenseView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[高剑侠]'s Articles
[朱德彰]'s Articles
[曹德新]'s Articles
Baidu academic
Similar articles in Baidu academic
[高剑侠]'s Articles
[朱德彰]'s Articles
[曹德新]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[高剑侠]'s Articles
[朱德彰]'s Articles
[曹德新]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 1．56MeV　Sb~＋注入单晶硅的反常退火行为.caj
Format: Unknown
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.