CAS OpenIR  > 中科院上海原子核所2003年前
14MeV中子辐照对发光二极管GaAsP性能的影响
潘洪进; 芮静宜
1984-01-31
Source Publication核技术
Issue01
Abstract<正> 发光二极管具有体积小、耗电少、调制性能好等优点;目前已广泛用于各个领域;它的辐照损伤研究曾有不少文章评论过;通过辐射损伤的研究;可以对管子的性能、辐射损伤机理及加固方法提供有价值的数据。我们利用200keV中子发生器;由T(d;n)~4He反应得到14MeV中子在室温条件下辐照发光二极管;并用光电倍加管、脉冲高度分析器测量在不同累积中子通量辐照下发光强度;从而得到发光二极管的光强变化与累积中子通量的关系;并初步确定辐射损伤常数。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10807
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
潘洪进,芮静宜. 14MeV中子辐照对发光二极管GaAsP性能的影响[J]. 核技术,1984(01).
APA 潘洪进,&芮静宜.(1984).14MeV中子辐照对发光二极管GaAsP性能的影响.核技术(01).
MLA 潘洪进,et al."14MeV中子辐照对发光二极管GaAsP性能的影响".核技术 .01(1984).
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