CAS OpenIR  > 中科院上海原子核所2003年前
20—80keV Ar~+离子对稀释Si(Co,Ta)合金的溅射
王震遐; 朱福英; 陈文彪; 曹德新; 鲍正开; 周祖尧
Source Publication核技术
Abstract<正> 荷能离子对单元素的溅射已有较好的理论解释;但是对多元合金或化合物溅射的研究才开始不久;目前尚无一个能够成功地解释实验现象的理论。 溅射后合金样品近表面组成的改变;是一种有趣的实验现象。实验中发现三元合金的现象比二元合金更为复杂;例如;元素的近表面改变与溅射离子的能量有关;这是用现有的择优溅射理论无法解释的。为研究这种现象;我们选取了Si(Co;Ta)三元合金;在分别用20到
Indexed ByCNKI
Funding Project原子核所项目组
Document Type期刊论文
Recommended Citation
GB/T 7714
王震遐,朱福英,陈文彪,等. 20—80keV Ar~+离子对稀释Si(Co,Ta)合金的溅射[J]. 核技术,1986(09).
APA 王震遐,朱福英,陈文彪,曹德新,鲍正开,&周祖尧.(1986).20—80keV Ar~+离子对稀释Si(Co,Ta)合金的溅射.核技术(09).
MLA 王震遐,et al."20—80keV Ar~+离子对稀释Si(Co,Ta)合金的溅射".核技术 .09(1986).
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