CAS OpenIR  > 中科院上海原子核所2003年前
BaF_2晶体的取向和入射束的剂量对溅射的影响
陶振兰; 王震遐; 朱福英; 章骥平; 潘冀生; 周祖尧; 沈定中; 袁湘龙; 华素坤
1994-10-30
Source Publication物理学报
Issue10
Abstract27keVAr ̄+离子束沿法向分别入射在BaF_2单晶(111);(100)和(110)的晶面上;用捕获器方法和Rutherford背散射分析法测定了Ba原子的溅射角分布和溅射产额。结果发现不同取向的晶体表面;它们的溅射产额有明显差异。当用剂量为5×10 ̄17ion/cm的Ar ̄+离子分别轰击这三种晶面时;其溅射产额的顺序Y_(100)>y_(111)>y_(110).对已被上述剂量辐照过的晶面再作相同剂量轰击时;测得的溅射产额明显增大。这些结果被认为是由于在离子辐照过程中表面晶格受损逐步增大所致。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10872
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
陶振兰,王震遐,朱福英,等. BaF_2晶体的取向和入射束的剂量对溅射的影响[J]. 物理学报,1994(10).
APA 陶振兰.,王震遐.,朱福英.,章骥平.,潘冀生.,...&华素坤.(1994).BaF_2晶体的取向和入射束的剂量对溅射的影响.物理学报(10).
MLA 陶振兰,et al."BaF_2晶体的取向和入射束的剂量对溅射的影响".物理学报 .10(1994).
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