CAS OpenIR  > 中科院上海原子核所2003年前
E/D型MODFET直接耦合倒相器的研制
朱旗; 冯国进
1990-03-02
Source Publication电子科技大学学报
Issue01
Abstract本文对 E/D 型 MODFET 直接耦合倒相器进行了设计与研制。利用国产分子束外延设备制备的 Al_xGa_(1-x)As/Ga As 调制掺杂外延材料;采用常规化合物半导体工艺;获得了具有正常逻辑输出功能的 MODFET 直接耦合倒相器。这对国内开展 MODFET 数字电路的研究与开发具有实际意义。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10917
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
朱旗,冯国进. E/D型MODFET直接耦合倒相器的研制[J]. 电子科技大学学报,1990(01).
APA 朱旗,&冯国进.(1990).E/D型MODFET直接耦合倒相器的研制.电子科技大学学报(01).
MLA 朱旗,et al."E/D型MODFET直接耦合倒相器的研制".电子科技大学学报 .01(1990).
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