CAS OpenIR  > 中科院上海原子核所2003年前
GaAs材料中EPR“As_(Ga)”缺陷的本性
汪光裕; 冯平义; 邹元爔; 曾繁安
1989-01-31
Source Publication电子学报
Issue01
Abstract本文根据EPR基本理论和量子化学的一些计算结果;并对照中子辐照GaAs样品中EPR“As_(Ga)”谱线形状随退火温度变化的实验结果;认为为了揭示EPR“As_(Ga)”缺陷本性必须考虑包括As_(Ga)周围多层配位原子在内的基体磁性核对于未成对电子的超精细(hf)相互作用。更进一步;本文还讨论了空位对EPR“As_(Ga)”谱线宽度和一级hf常数等影响;从而首次明确指出GaAs中EPR“As_(Ga)”可鉴别为As_(Ga)及其有关空位络合物。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10931
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
汪光裕,冯平义,邹元爔,等. GaAs材料中EPR“As_(Ga)”缺陷的本性[J]. 电子学报,1989(01).
APA 汪光裕,冯平义,邹元爔,&曾繁安.(1989).GaAs材料中EPR“As_(Ga)”缺陷的本性.电子学报(01).
MLA 汪光裕,et al."GaAs材料中EPR“As_(Ga)”缺陷的本性".电子学报 .01(1989).
Files in This Item: Download All
File Name/Size DocType Version Access License
GaAs材料中EPR“As_(Ga)”缺(210KB) 开放获取LicenseView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[汪光裕]'s Articles
[冯平义]'s Articles
[邹元爔]'s Articles
Baidu academic
Similar articles in Baidu academic
[汪光裕]'s Articles
[冯平义]'s Articles
[邹元爔]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[汪光裕]'s Articles
[冯平义]'s Articles
[邹元爔]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: GaAs材料中EPR“As_(Ga)”缺陷的本性.caj
Format: Unknown
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.