CAS OpenIR  > 中科院上海原子核所2003年前
Ge(Li)γ谱仪的效率刻度
王功庆; 刘静怡; 肖根来; 梁渝生; 吕尚女; 张怡萍
1981-05-01
Source Publication核技术
Issue04
Abstract在60~3500keV能区;用~(75)Se;~(152)Eu及~(56)Co对Ge(Li)探测器作了相对效率刻度;并用标定过强度的~(113m)In、~(60)Co作了绝对效率刻度。应用三次样条函数做拟合内插;由加权平均的归一化系数;给出这能区中33个点的绝对效率及其误差值。γ能谱由自动解谱程序分析。能区中任一点的绝对效率及其误差;可由三组三次样条函数拟合内插程序算出;绝对效率值的误差<±4%。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/10933
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
王功庆,刘静怡,肖根来,等. Ge(Li)γ谱仪的效率刻度[J]. 核技术,1981(04).
APA 王功庆,刘静怡,肖根来,梁渝生,吕尚女,&张怡萍.(1981).Ge(Li)γ谱仪的效率刻度.核技术(04).
MLA 王功庆,et al."Ge(Li)γ谱仪的效率刻度".核技术 .04(1981).
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