CAS OpenIR  > 中科院上海原子核所2003年前
Pt、PZT、Pt电容的γ射线辐照积累剂量效应
高剑侠; 郑立荣; 王连卫; 林成鲁; 朱德彰
1998-12-30
Source Publication功能材料与器件学报
Issue04
Abstract研究了γ辐照积累剂量对PZT铁电电容的电滞回线和CV特性的影响;结果表明;在积累剂量辐照过程中;由于辐照感生缺陷的影响;剩余极化和矫顽场增加;介电常数下降。根据实验结果和铁电材料的有关辐照理论;提出了剩余极化随积累剂量变化的缺陷相关模型。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11012
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
高剑侠,郑立荣,王连卫,等. Pt、PZT、Pt电容的γ射线辐照积累剂量效应[J]. 功能材料与器件学报,1998(04).
APA 高剑侠,郑立荣,王连卫,林成鲁,&朱德彰.(1998).Pt、PZT、Pt电容的γ射线辐照积累剂量效应.功能材料与器件学报(04).
MLA 高剑侠,et al."Pt、PZT、Pt电容的γ射线辐照积累剂量效应".功能材料与器件学报 .04(1998).
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