CAS OpenIR  > 中科院上海原子核所2003年前
p型超纯硅探测器
尤乃谈; 顾桂君; 沈维生
1983-03-02
Source Publication核技术
Issue02
Abstract<正> P型硅单晶通常用来制备具有几个毫米厚的Si(Li)探测器;如果象高纯锗一样;硅单晶的纯度足够高;它不需要进行锂漂移就可制成较厚的硅探测器。此种探测器在使用时需冷却;而在保存时可回暖到室温。我们应用浙江大学研制的超纯硅单晶;制成了灵敏面积为50mm~2、厚度为1.73mm的探测器Si(Hp)-82101;在77K下;测得对~(207)Bi1063.4keV跃迁的K内转换电子能量分辨率为1.72keV;这已超过目前用高阻硅和Si(Li)探测器测量所获得的最好分辨率水平1.9keV。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11013
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
尤乃谈,顾桂君,沈维生. p型超纯硅探测器[J]. 核技术,1983(02).
APA 尤乃谈,顾桂君,&沈维生.(1983).p型超纯硅探测器.核技术(02).
MLA 尤乃谈,et al."p型超纯硅探测器".核技术 .02(1983).
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