CAS OpenIR  > 中科院上海原子核所2003年前
Si(Li)半导体电子谱仪的效率刻度
朱家璧; 郑万辉; 顾加辉; 王功庆
1982-06-30
Source Publication核技术
Issue06
Abstract<正> Si(Li)半导体电子谱仪与磁谱仪相比;具有探测效率高、价廉、制作方便;分辨率相当于许多透镜型磁谱仪;并能作全能谱测量等优点。它是目前核谱测量中常用的一种设备;对于短寿命弱放射性的测量尤为适宜。Si(Li)电子谱仪的效率刻度是谱仪作定量测量的基础。谱仪经效率刻度后;能精确测量电子谱线的相对、绝对强度。结合γ射线强度测量就能算出内转换系数;这是确定核跃迁多极性的重要方法;也是确定核素纲图中绝对跃迁数的重要方法。因此电子谱仪的效率刻度在核物理研究、同位素应用、核爆辐射场、天体辐射带等关于β及电子强度测量中是必不可少的。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11020
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
朱家璧,郑万辉,顾加辉,等. Si(Li)半导体电子谱仪的效率刻度[J]. 核技术,1982(06).
APA 朱家璧,郑万辉,顾加辉,&王功庆.(1982).Si(Li)半导体电子谱仪的效率刻度.核技术(06).
MLA 朱家璧,et al."Si(Li)半导体电子谱仪的效率刻度".核技术 .06(1982).
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