CAS OpenIR  > 中科院上海原子核所2003年前
超纯P型硅探测器的制备和室温特性
尤乃谈
1983-06-30
Source Publication核技术
Issue06
Abstract本文主要叙述超纯P型硅探测器的制备和性能。应用浙江大学研制的超纯硅单晶制成50mm~2×1.5mm的Si(Hp)探测器;在室温10℃;对~(270)Bi 481.6keV和976keV内转换电子的能量分辨率分别为6.3keV和8.58keV;对~(137)Cs624keV内转换电子能量分辨率为7.1keV。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11144
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
尤乃谈. 超纯P型硅探测器的制备和室温特性[J]. 核技术,1983(06).
APA 尤乃谈.(1983).超纯P型硅探测器的制备和室温特性.核技术(06).
MLA 尤乃谈."超纯P型硅探测器的制备和室温特性".核技术 .06(1983).
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