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大剂量P~＋离子注入单晶硅的研究
高剑侠; 朱德彰; 曹德新; 周祖尧
1994-02-10
Source Publication核技术
Issue02
Abstract采用４８０ｋｅＶＰ＋离子注入单晶硅;注入剂量为１×１０１６ｃｍ－２。采用ＲＢＳ、ＴＥＭ技术测试样品;发现样品经６００℃退火后;距样品表面约２４０ｎｍ处有一条低密度缺陷带。研究表明;这一现象与Ｐ＋的剂量及退火温度有关。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11215
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714		 高剑侠,朱德彰,曹德新,等. 大剂量P~＋离子注入单晶硅的研究[J]. 核技术,1994(02).
APA 高剑侠,朱德彰,曹德新,&周祖尧.(1994).大剂量P~＋离子注入单晶硅的研究.核技术(02).
MLA 高剑侠,et al."大剂量P~＋离子注入单晶硅的研究".核技术 .02(1994).
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