CAS OpenIR  > 中科院上海原子核所2003年前
氘子活化法测定硅表面钠
荣廷(一乂); 秦俊法; 林森浩; 王学波
1981-10-28
Source Publication半导体技术
Issue05
Abstract<正> 1.前言 半导体硅片的清洗工艺是半导体器件生产中最关键的工艺之一。它对器件的特性及其可靠性有着决定的作用。至今为止;国内半导体器件生产工艺中几乎全部使用具有强烈腐蚀性的氧化剂或无机酸;如硝酸、硫酸、双氧水、盐酸等试剂。这些试剂因为具有强烈的腐蚀性;所以经常侵蚀设备;污染环境;损害工人的身体健康;而且这些试剂的价格也比较昂贵;因而也提高了器件的成本。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11244
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
荣廷(一乂),秦俊法,林森浩,等. 氘子活化法测定硅表面钠[J]. 半导体技术,1981(05).
APA 荣廷,秦俊法,林森浩,&王学波.(1981).氘子活化法测定硅表面钠.半导体技术(05).
MLA 荣廷,et al."氘子活化法测定硅表面钠".半导体技术 .05(1981).
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