CAS OpenIR  > 中科院上海原子核所2003年前
辐照LiF单晶中色心的正电子寿命谱研究
彭郁卿; 郑万辉; 张怡萍; 包于洪; 李胜华
1996-12-10
Source Publication核技术
Issue12
Abstract用60Co源的γ射线辐照纯的LiF单晶;剂量范围为0.99×103-1.3×106Gy;用快-慢符合系统测量正电子寿命谱;给出了第二寿命成分τ2及其强度差△I2随照射剂量的变化。结果表明;在剂量D≤1×104Gy范围内;τ2基本不变;平均值为291ps;△I2∝D1/2;与F心浓度NF∝D1/2系相似;表明有△I2∝NF;当剂量增加;F聚集心出现后;τ2变大;I2增加变慢;直至出现饱和。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11393
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
彭郁卿,郑万辉,张怡萍,等. 辐照LiF单晶中色心的正电子寿命谱研究[J]. 核技术,1996(12).
APA 彭郁卿,郑万辉,张怡萍,包于洪,&李胜华.(1996).辐照LiF单晶中色心的正电子寿命谱研究.核技术(12).
MLA 彭郁卿,et al."辐照LiF单晶中色心的正电子寿命谱研究".核技术 .12(1996).
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