CAS OpenIR  > 中科院上海原子核所2003年前
硅基体的金属钼反冲注入
王玟珉; 吴俊恒; 张达明
1984-01-31
Source Publication核技术
Issue01
Abstract<正> 在某基体的表面;真空蒸镀一层其它材料的薄膜;用离子轰击时将引起原子级联碰撞而导致基体原子和薄层原子的混合;特别是在界面区域的混合。所谓反冲注入是指薄层原子在此过程中进入基体的现象。目前;离子束混合已开始应用到半导体器件及金属等材料改性的领域中。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11485
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
王玟珉,吴俊恒,张达明. 硅基体的金属钼反冲注入[J]. 核技术,1984(01).
APA 王玟珉,吴俊恒,&张达明.(1984).硅基体的金属钼反冲注入.核技术(01).
MLA 王玟珉,et al."硅基体的金属钼反冲注入".核技术 .01(1984).
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