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简易Si(Au)半导体电子谱仪
郑万辉; 张金洲; 朱家璧; 田家祺; 顾加辉; 周桂芬
1982-05-31
Source Publication核技术
Issue05
Abstract<正> 金硅面垒半导体探测器Si(Au)及漂移型半导体探测器Si(Li)用于测量电子谱已有十几年的历史。F.M.Bernthal等曾利用半导体谱仪成功地测量了短寿命核素~(176)Ta的83个跃迁的电子谱。近年来;采用半导体探测器与一个小型磁谱仪相结合;同时实行能量和动量的选择;成功地实现了在束内转换系数的测量;这是目前在束能谱确定核态特性的重要方法之一。与Si(Li)相比;Si(Au)面垒探测器用于电子谱的测量有很多优点;它制备时间短、比较便宜、较易制薄窗、不易受辐射损伤;可在室温下保存。它的主要缺点是:需要高纯Si材料才能获得较大的灵敏厚度。面垒型探测器直至七十年代中期才获得1.9~3.5kev的
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11643
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
郑万辉,张金洲,朱家璧,等. 简易Si(Au)半导体电子谱仪[J]. 核技术,1982(05).
APA 郑万辉,张金洲,朱家璧,田家祺,顾加辉,&周桂芬.(1982).简易Si(Au)半导体电子谱仪.核技术(05).
MLA 郑万辉,et al."简易Si(Au)半导体电子谱仪".核技术 .05(1982).
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