CAS OpenIR  > 中科院上海原子核所2003年前
溅射原子角分布的同位素效应
王震遐; 朱福英; 陈文彪; 张衡山; 张阿虎
1986-03-02
Source Publication核技术
Issue02
Abstract本文报道了用50keV Ar~+离子在垂直入射情况下对Cu元素进行溅射的实验。研究了作为发射角函数的同位素富集行为。结果表明;较轻的同位素无富集;而较重的同位素在从~5°到80°发射角范围内都是富集的。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11649
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
王震遐,朱福英,陈文彪,等. 溅射原子角分布的同位素效应[J]. 核技术,1986(02).
APA 王震遐,朱福英,陈文彪,张衡山,&张阿虎.(1986).溅射原子角分布的同位素效应.核技术(02).
MLA 王震遐,et al."溅射原子角分布的同位素效应".核技术 .02(1986).
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