CAS OpenIR  > 中科院上海原子核所2003年前
聚苯胺薄膜的离子束效应
林森浩; 荣廷文; 万洪和; 鲍锦荣; 王玟珉; 孙剑华; 景遐斌; 王利祥; 范洪有
1994-01-20
Source Publication高分子学报
Issue01
Abstract本文采用离子注入掺杂技术;研究了全氧化态聚苯胺薄膜的离子束效应.‘40kVK+离子束注入后;聚苯胺薄膜的电导率随着剂量的增加而迅速增加.当剂量为1×1017K+/cm2时;电导率增加了8个数量级.FTIR光谱图显示了K+离子注入使全氧化态聚苯胺中的醌亚胺结构发生还原反应.温差电流法测量表明;离子注入区呈现n型半导体特性.四探针法测量了离子注入掺杂聚苯胺的电导率与温度的关系.本文还对离子注入掺杂全氧化态聚苯胺的导电机制进行了初步探讨.
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11683
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
林森浩,荣廷文,万洪和,等. 聚苯胺薄膜的离子束效应[J]. 高分子学报,1994(01).
APA 林森浩.,荣廷文.,万洪和.,鲍锦荣.,王玟珉.,...&范洪有.(1994).聚苯胺薄膜的离子束效应.高分子学报(01).
MLA 林森浩,et al."聚苯胺薄膜的离子束效应".高分子学报 .01(1994).
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