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离子注入C_(60)薄膜的电导率变化
张建国; 崔云龙; 巩金龙; 林森浩; 荣廷文
1997-06-10
Source Publication核技术
Issue06
Abstract沉积在云母片上的纯Ｃ６０薄膜受２０ｋｅＶ的Ｌｉ＋和Ｎ＋２离子轰击;剂量在０．５×１０１６／ｃｍ２～５．０×１０１６／ｃｍ２之间改变;测量了离子注入后Ｃ６０薄膜方块电阻随温度的变化;进而推导出Ｃ６０薄膜电导率随温度和注入离子剂量的变化;分析了非原位测量中氧元素对电导率变化的影响以及能量较高的注入离子对Ｃ６０薄膜的辐照损伤效应。研究结果表明;Ｌｉ＋注入对Ｃ６０薄膜电导率的影响明显高于Ｎ＋２注入的影响;并给出了不同离子注入条件下Ｃ６０薄膜电导率随温度变化的函数关系式。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11759
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714		 张建国,崔云龙,巩金龙,等. 离子注入C_(60)薄膜的电导率变化[J]. 核技术,1997(06).
APA 张建国,崔云龙,巩金龙,林森浩,&荣廷文.(1997).离子注入C_(60)薄膜的电导率变化.核技术(06).
MLA 张建国,et al."离子注入C_(60)薄膜的电导率变化".核技术 .06(1997).
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