CAS OpenIR  > 中科院上海原子核所2003年前
镍增进无定形硅低温固相外延生长
曹德新; 朱德彰; 朱福英; 曹建清
1997-02-10
Source Publication核技术
Issue02
Abstract离子注入形成的无定形硅在可形成硅化物杂质镍作用下;促使无定形层硅在低温(430℃)时发生了固相外延生长。注入杂质镍浓度为1×1012-2.5×1017Ni/cm2。卢瑟福背散射和沟道(RBS-C)测量表明;6个量级剂量注入并经430℃退火后的样品都发生了不同程度的固相外延生长;且比通常固相外延生长约加快了二个数量级;其外延生长速度与镍浓度相关。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/11849
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
曹德新,朱德彰,朱福英,等. 镍增进无定形硅低温固相外延生长[J]. 核技术,1997(02).
APA 曹德新,朱德彰,朱福英,&曹建清.(1997).镍增进无定形硅低温固相外延生长.核技术(02).
MLA 曹德新,et al."镍增进无定形硅低温固相外延生长".核技术 .02(1997).
Files in This Item: Download All
File Name/Size DocType Version Access License
镍增进无定形硅低温固相外延生长.caj(59KB) 开放获取LicenseView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[曹德新]'s Articles
[朱德彰]'s Articles
[朱福英]'s Articles
Baidu academic
Similar articles in Baidu academic
[曹德新]'s Articles
[朱德彰]'s Articles
[朱福英]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[曹德新]'s Articles
[朱德彰]'s Articles
[朱福英]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 镍增进无定形硅低温固相外延生长.caj
Format: Unknown
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.