CAS OpenIR  > 中科院上海原子核所2003年前
调制掺杂场效应晶体管的直流特性
朱旗
1990
Source Publication电子科技大学学报
Issue02
Abstract对调制掺杂场效应晶体管的栅控特性进行了研究。考虑费米能级随二维电子气浓度的变化;计算了器件的直流特性。计算结果包括在阈值电压附近以及非饱和区;与实验结果吻合较佳。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12050
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
朱旗. 调制掺杂场效应晶体管的直流特性[J]. 电子科技大学学报,1990(02).
APA 朱旗.(1990).调制掺杂场效应晶体管的直流特性.电子科技大学学报(02).
MLA 朱旗."调制掺杂场效应晶体管的直流特性".电子科技大学学报 .02(1990).
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