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团簇沉积C-N薄膜的研究
陈景升; 俞国庆; 张志滨; 潘浩昌; 朱德彰; 徐洪杰; 郑志豪; 阎逢元
2001
Source Publication核技术
Issue06
Abstract利用荷能团簇沉积装置在高阻硅 ( 111)衬底上沉积了碳氮薄膜。通过红外光谱、拉曼谱和X光电子能谱对薄膜的结构和化学组分进行了分析。结果表明 ;薄膜中存在N -sp3C( β -C3N4 的键合方式 ) ;但以N -sp2 C和C =C双键的结合方式为主。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12082
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
陈景升,俞国庆,张志滨,等. 团簇沉积C-N薄膜的研究[J]. 核技术,2001(06).
APA 陈景升.,俞国庆.,张志滨.,潘浩昌.,朱德彰.,...&阎逢元.(2001).团簇沉积C-N薄膜的研究.核技术(06).
MLA 陈景升,et al."团簇沉积C-N薄膜的研究".核技术 .06(2001).
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