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新型~(68)Ge/~(68)Ga发生器研究——Ⅰ.三个~(68)Ge ~(68)Ga发生器体系的比较
宋明; 包伯荣
1994
Source Publication同位素
Issue04
Abstract为了制备性能更好的~(68)Ge/~(68)Ga发生器;以满足正电子断层显象技术发展的需要;调查了多种载体的Ge、Ga吸附性质;建立了三个~(68)Ge/~(68)Ga发生器体系:CaCO_3-Ca(OH)_2、活性炭—Ca(OH)_2和CeO_2-HCI.其中以 CeO_2.支持体的性能最好;3ml 0.02 mol/I HCI淋出液的~(68)Ga产率>60%;~(68)Ge的流穿<0.05%.
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12162
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714		 宋明,包伯荣. 新型~(68)Ge/~(68)Ga发生器研究——Ⅰ.三个~(68)Ge ~(68)Ga发生器体系的比较[J]. 同位素,1994(04).
APA 宋明,&包伯荣.(1994).新型~(68)Ge/~(68)Ga发生器研究——Ⅰ.三个~(68)Ge ~(68)Ga发生器体系的比较.同位素(04).
MLA 宋明,et al."新型~(68)Ge/~(68)Ga发生器研究——Ⅰ.三个~(68)Ge ~(68)Ga发生器体系的比较".同位素 .04(1994).
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