CAS OpenIR  > 中科院上海原子核所2003年前
新型~(68)Ge/~(68)Ga发生器研究Ⅱ.CeO_2支持体的制备条件与发
宋明; 包伯荣
1995
Source Publication同位素
Issue01
Abstract在不同条件下制备了一系列CeO_2支持体;对它们的Ge、Ga吸附性质进行了研究;选择其中的三种制备了实验性的 ̄(68)Ge/ ̄(68)Ga发生器;并考查了它们的淋洗性能。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12163
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
宋明,包伯荣. 新型~(68)Ge/~(68)Ga发生器研究Ⅱ.CeO_2支持体的制备条件与发[J]. 同位素,1995(01).
APA 宋明,&包伯荣.(1995).新型~(68)Ge/~(68)Ga发生器研究Ⅱ.CeO_2支持体的制备条件与发.同位素(01).
MLA 宋明,et al."新型~(68)Ge/~(68)Ga发生器研究Ⅱ.CeO_2支持体的制备条件与发".同位素 .01(1995).
Files in This Item: Download All
File Name/Size DocType Version Access License
新型~(68)Ge/~(68)Ga发生器(147KB) 开放获取LicenseView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[宋明]'s Articles
[包伯荣]'s Articles
Baidu academic
Similar articles in Baidu academic
[宋明]'s Articles
[包伯荣]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[宋明]'s Articles
[包伯荣]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 新型~(68)Ge/~(68)Ga发生器研究Ⅱ.CeO_2支持体的制备条件与发.caj
Format: Unknown
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.