液氮致冷金硅面垒半导体电子谱仪

CAS OpenIR > 中科院上海原子核所2003年前

	液氮致冷金硅面垒半导体电子谱仪
	郑万辉; 张金洲; 朱家璧; 田家祺; 顾加辉; 周桂芬
	1983
Source Publication	核电子学与探测技术
Issue	03
Abstract	<正> 用半导体探测器[包括面垒型Si(Au)及漂移型Si(Li)]测量电子谱的好处是:分辨率比闪烁计数器要好几十倍;与一般纵向磁谱仪相当;但效率比磁谱仪高得多;结构简单、价格便宜;尤其是它能够作多道式的同时性全谱测量;在低活性和短寿命核素的电子能谱测量中;具有很大的优越性。F.U.M.Bernthal等人以曾测量T_(1/2)=8.1小时
Indexed By	CNKI
Language	中文
Funding Project	原子核所项目组
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/12206
Collection	中科院上海原子核所2003年前
Recommended Citation GB/T 7714	郑万辉,张金洲,朱家璧,等. 液氮致冷金硅面垒半导体电子谱仪[J]. 核电子学与探测技术,1983(03).
APA	郑万辉,张金洲,朱家璧,田家祺,顾加辉,&周桂芬.(1983).液氮致冷金硅面垒半导体电子谱仪.核电子学与探测技术(03).
MLA	郑万辉,et al."液氮致冷金硅面垒半导体电子谱仪".核电子学与探测技术 .03(1983).

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