CAS OpenIR  > 中科院上海原子核所2003年前
液氮致冷金硅面垒半导体电子谱仪
郑万辉; 张金洲; 朱家璧; 田家祺; 顾加辉; 周桂芬
1983
Source Publication核电子学与探测技术
Issue03
Abstract<正> 用半导体探测器[包括面垒型Si(Au)及漂移型Si(Li)]测量电子谱的好处是:分辨率比闪烁计数器要好几十倍;与一般纵向磁谱仪相当;但效率比磁谱仪高得多;结构简单、价格便宜;尤其是它能够作多道式的同时性全谱测量;在低活性和短寿命核素的电子能谱测量中;具有很大的优越性。F.U.M.Bernthal等人以曾测量T_(1/2)=8.1小时
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12206
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
郑万辉,张金洲,朱家璧,等. 液氮致冷金硅面垒半导体电子谱仪[J]. 核电子学与探测技术,1983(03).
APA 郑万辉,张金洲,朱家璧,田家祺,顾加辉,&周桂芬.(1983).液氮致冷金硅面垒半导体电子谱仪.核电子学与探测技术(03).
MLA 郑万辉,et al."液氮致冷金硅面垒半导体电子谱仪".核电子学与探测技术 .03(1983).
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