CAS OpenIR  > 中科院上海原子核所2003年前
以SnO_2为支持体的~(68)Ge-~(68)Ga发生器的研究
李宗全; 汪勇先
1997
Source Publication同位素
Issue02
Abstract研究了六种SnO2对68Ge和68Ga的吸附性能。以性能较好的一种为支持体制备68Ge-68Ga发生器;并观察了淋洗条件对其性能的影响。以1.0mol/LHCl为淋洗剂;所得4.0mL淋洗剂中68Ga的收率可达60%;68Ge漏穿小于0.04%;且95%可被洗下的68Ga集中在前3.0mL淋洗液中。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12254
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
李宗全,汪勇先. 以SnO_2为支持体的~(68)Ge-~(68)Ga发生器的研究[J]. 同位素,1997(02).
APA 李宗全,&汪勇先.(1997).以SnO_2为支持体的~(68)Ge-~(68)Ga发生器的研究.同位素(02).
MLA 李宗全,et al."以SnO_2为支持体的~(68)Ge-~(68)Ga发生器的研究".同位素 .02(1997).
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