CAS OpenIR  > 中科院上海原子核所2003年前
用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化
朱德彰; 潘浩昌; 曹建清; 朱福英; 陈国明; 陈国樑; 杨絜; 邹世昌
1990
Source Publication物理学报
Issue08
Abstract用高分辨率沟道背散射技术研究了低能N离子注入单晶硅形成氮化硅的过程。测出了N和位移Si原子的深度分布。提出在N离子注入时同时存在着三个过程——注入、溅射和释放。由此建立了一个微分方程描写样品中剩余N的浓度变化;并讨论了氮化硅形成机制。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12307
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
朱德彰,潘浩昌,曹建清,等. 用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化[J]. 物理学报,1990(08).
APA 朱德彰.,潘浩昌.,曹建清.,朱福英.,陈国明.,...&邹世昌.(1990).用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化.物理学报(08).
MLA 朱德彰,et al."用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化".物理学报 .08(1990).
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