用时间分辨反射率技术研究硅的固相外延

CAS OpenIR > 中科院上海原子核所2003年前

	用时间分辨反射率技术研究硅的固相外延
	王小兵; 朱福英; 潘浩昌; 曹德新; 朱德彰
	1994
Source Publication	核技术
Issue	08
Abstract	用时间分辨反射率技术实时测量了Ｓｉ＋、Ａｓ＋注入单晶硅的固相外延生长速率和外延层厚度;并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理;分析了实验结果．
Indexed By	CNKI
Language	中文
Funding Project	原子核所项目组
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/12338
Collection	中科院上海原子核所2003年前
Recommended Citation GB/T 7714	王小兵,朱福英,潘浩昌,等. 用时间分辨反射率技术研究硅的固相外延[J]. 核技术,1994(08).
APA	王小兵,朱福英,潘浩昌,曹德新,&朱德彰.(1994).用时间分辨反射率技术研究硅的固相外延.核技术(08).
MLA	王小兵,et al."用时间分辨反射率技术研究硅的固相外延".核技术 .08(1994).

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

File name:	用时间分辨反射率技术研究硅的固相外延.caj
Format:	Unknown

This file does not support browsing at this time

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院上海应用物理研究所机构知识库