CAS OpenIR  > 中科院上海原子核所2003年前
用时间分辨反射率技术研究硅的固相外延
王小兵; 朱福英; 潘浩昌; 曹德新; 朱德彰
1994
Source Publication核技术
Issue08
Abstract用时间分辨反射率技术实时测量了Si+、As+注入单晶硅的固相外延生长速率和外延层厚度;并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理;分析了实验结果.
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12338
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
王小兵,朱福英,潘浩昌,等. 用时间分辨反射率技术研究硅的固相外延[J]. 核技术,1994(08).
APA 王小兵,朱福英,潘浩昌,曹德新,&朱德彰.(1994).用时间分辨反射率技术研究硅的固相外延.核技术(08).
MLA 王小兵,et al."用时间分辨反射率技术研究硅的固相外延".核技术 .08(1994).
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