CAS OpenIR  > 中科院上海原子核所2003年前
用正电子湮没辐射Doppler展宽谱测位错密度和空位浓度
彭郁卿; 郑万辉; 朱家璧; 王景成
1983
Source Publication科学通报
Issue01
Abstract<正> 一、方法由于正电子对物质结构缺陷的极端灵敏性;正电子湮没谱学已经广泛地被人们用来分析金属试样的缺陷。正电子射入金属试样经过热化后;遇到电子就发生湮没;正电子-电子对的静止质量转化为电磁辐射;主要的形式是产生两个发射方向相反、能量各为0.511MeV的γ光
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12360
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
彭郁卿,郑万辉,朱家璧,等. 用正电子湮没辐射Doppler展宽谱测位错密度和空位浓度[J]. 科学通报,1983(01).
APA 彭郁卿,郑万辉,朱家璧,&王景成.(1983).用正电子湮没辐射Doppler展宽谱测位错密度和空位浓度.科学通报(01).
MLA 彭郁卿,et al."用正电子湮没辐射Doppler展宽谱测位错密度和空位浓度".科学通报 .01(1983).
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