CAS OpenIR  > 中科院上海原子核所2003年前
质子活化分析法测定高纯锗中痕量氧
章家鼎
1979
Source Publication核技术
Issue02
Abstract<正> 一、引言 近年来;由于对半导体材料的需要日益增长;以及制造Ge(Li)半导体探测器技术的迅猛发展;对锗材料的质量要求越来越高了。在一些研究中发现;锗中含的微量氧;对器件的性能会产生很大影响;从而提出了测定高纯锗中痕量氧(氧含量<1ppm)的要求。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12424
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
章家鼎. 质子活化分析法测定高纯锗中痕量氧[J]. 核技术,1979(02).
APA 章家鼎.(1979).质子活化分析法测定高纯锗中痕量氧.核技术(02).
MLA 章家鼎."质子活化分析法测定高纯锗中痕量氧".核技术 .02(1979).
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