CAS OpenIR  > 中科院上海原子核所2003年前
组合离子束技术在硅基材料芯片中的应用
陈昌明; 潘浩昌; 黄建鸣; 朱德彰; 曹建清; 叶伯年; 胡钧; 李民乾
1999
Source Publication核技术
Issue02
Abstract将组合技术和离子束技术结合起来;用于硅基发光材料的研究。用组合离子束技术在硅 基材料上制备了64个直径为2mm的单元──材料芯片;并对硅基材料芯片各单元进行了卢瑟辐 背散射、质子弹性散射和扫描阴极射线发光特性分析。
Indexed ByCNKI
Language中文
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12475
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
陈昌明,潘浩昌,黄建鸣,等. 组合离子束技术在硅基材料芯片中的应用[J]. 核技术,1999(02).
APA 陈昌明.,潘浩昌.,黄建鸣.,朱德彰.,曹建清.,...&李民乾.(1999).组合离子束技术在硅基材料芯片中的应用.核技术(02).
MLA 陈昌明,et al."组合离子束技术在硅基材料芯片中的应用".核技术 .02(1999).
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