CAS OpenIR  > 中科院上海原子核所2003年前
缪中林; 陆卫; 陈平平; 李志锋; 刘平; 袁先漳; 蔡炜颖; 徐文兰; 沈学础; 陈昌明; 朱德彰; 胡军; 李明乾
Source Publication半导体学报
Abstract用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ;用组合离子注入的方法 ;在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ;在未经快速热退火的条件下 ;于常温下测量了光调制反射光谱 ;发现各单元的子带间跃迁能量最大变化范围可达80 me V .
Indexed ByCNKI
Funding Project原子核所项目组
Document Type期刊论文
Recommended Citation
GB/T 7714
缪中林,陆卫,陈平平,等. 组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱[J]. 半导体学报,2001(06).
APA 缪中林.,陆卫.,陈平平.,李志锋.,刘平.,...&李明乾.(2001).组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱.半导体学报(06).
MLA 缪中林,et al."组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱".半导体学报 .06(2001).
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