CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
T型半导体量子线的动态屏蔽效应
刘月; 王廷栋; 白凌志; 程诚; 张伟; 怀平
2012
Source Publication核技术
ISSN0253-3219
Issue6Pages:467-471
Abstract采用动态屏蔽库仑势计算了T型半导体量子线的载流子自能,讨论了电子、空穴的自能及其对量子线截面尺度的依赖关系。计算结果表明,准一维体系具有很强的量子限域效应,显著增强了载流子间的有效库仑作用。受电子间强烈散射的影响,动态屏蔽导致了电子能带重整化及寿命的很大变化。与准静态近似计算结果相比,动态屏蔽效应对空穴的影响较小。
Indexed ByCNKI
Language中文
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12719
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
刘月,王廷栋,白凌志,等. T型半导体量子线的动态屏蔽效应[J]. 核技术,2012(6):467-471.
APA 刘月,王廷栋,白凌志,程诚,张伟,&怀平.(2012).T型半导体量子线的动态屏蔽效应.核技术(6),467-471.
MLA 刘月,et al."T型半导体量子线的动态屏蔽效应".核技术 .6(2012):467-471.
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