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EXAFS and SR-XRD study on Mn occupations in Zn1-xMnxO diluted magnetic semiconductors
Li, M.; Zhang, B.; Wang, J. Z.; Shi, L. Q.; Cheng, H. S.; Wang, Y. Z.; Lv, H. Y.; Yang, T. Y.; Wen, W.; Hu, F. C.
2011
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN0168-583X
Volume269Issue:21Pages:2610
AbstractMn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn3O4 and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms. (C) 2011 Elsevier B.V. All rights reserved.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000296078600022
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12859
Collection中科院上海应用物理研究所2011-2020年
Recommended Citation
GB/T 7714
Li, M.,Zhang, B.,Wang, J. Z.,et al. EXAFS and SR-XRD study on Mn occupations in Zn1-xMnxO diluted magnetic semiconductors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269(21):2610.
APA Li, M..,Zhang, B..,Wang, J. Z..,Shi, L. Q..,Cheng, H. S..,...&Hu, F. C..(2011).EXAFS and SR-XRD study on Mn occupations in Zn1-xMnxO diluted magnetic semiconductors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269(21),2610.
MLA Li, M.,et al."EXAFS and SR-XRD study on Mn occupations in Zn1-xMnxO diluted magnetic semiconductors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269.21(2011):2610.
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