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Role of defect electronic states in the ferromagnetism in graphite
He, Zhoutong(贺周同); Yang, Xinmei; Xia, Huihao(夏汇浩); Regier, T. Z.; Chevrier, D. K.; Zhou, Xingtai(周兴泰); Sham, T. K.
2012
Source PublicationPHYSICAL REVIEW B
ISSN1098-0121
Volume85Issue:14
AbstractThe mechanism of ferromagnetism in carbon-based materials, which contain only s and p electrons in contrast to traditional ferromagnets based on 3d or 4f electrons, is important but unclear. Here, by means of near-edge x-ray-absorption fine-structure (NEXAFS) and bulk magnetization measurements, we demonstrate that the origin of ferromagnetism in C-12(+) ion implanted highly oriented pyrolytic graphite (HOPG) is closely correlated with the defect electronic states near the Fermi level. The angle-dependent NEXAFS spectra imply that these defect-induced electronic states are extended on the graphite basal plane. We attribute the origin of electronic states to the vacancy defects created under C-12(+) ion implantation. The intensity of the observed ferromagnetism in HOPG is sensitive to the defect density, and the narrow implantation dosage window that produces ferromagnetism is optimized.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000302610900006
Citation statistics
Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12911
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
He, Zhoutong,Yang, Xinmei,Xia, Huihao,et al. Role of defect electronic states in the ferromagnetism in graphite[J]. PHYSICAL REVIEW B,2012,85(14).
APA He, Zhoutong.,Yang, Xinmei.,Xia, Huihao.,Regier, T. Z..,Chevrier, D. K..,...&Sham, T. K..(2012).Role of defect electronic states in the ferromagnetism in graphite.PHYSICAL REVIEW B,85(14).
MLA He, Zhoutong,et al."Role of defect electronic states in the ferromagnetism in graphite".PHYSICAL REVIEW B 85.14(2012).
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