LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING

CAS OpenIR > 中科院上海原子核所2003年前

	LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING
	CAO, DX(曹德新）; CHU, TC; ZHOU, ZY; DAI, RZ; HU, JZ; DEUTCH, BI
	1981
Source Publication	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH
ISSN	0029-554X
Volume	191 Issue:41277
Indexed By	SCI
Language	英语
Funding Project	原子核所项目组
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/12955
Collection	中科院上海原子核所2003年前
Recommended Citation GB/T 7714	CAO, DX,CHU, TC,ZHOU, ZY,et al. LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,1981,191(41277).
APA	CAO, DX,CHU, TC,ZHOU, ZY,DAI, RZ,HU, JZ,&DEUTCH, BI.(1981).LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,191(41277).
MLA	CAO, DX,et al."LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH 191.41277(1981).

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