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LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING
CAO, DX(曹德新); CHU, TC; ZHOU, ZY; DAI, RZ; HU, JZ; DEUTCH, BI
1981
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH
ISSN0029-554X
Volume191Issue:41277
Indexed BySCI
Language英语
Funding Project原子核所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/12955
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
CAO, DX,CHU, TC,ZHOU, ZY,et al. LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,1981,191(41277).
APA CAO, DX,CHU, TC,ZHOU, ZY,DAI, RZ,HU, JZ,&DEUTCH, BI.(1981).LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,191(41277).
MLA CAO, DX,et al."LATTICE DEFORMATION AND IMPURITY LOCATION OF BI IMPLANTED SI INDUCED BY PULSED LASER ANNEALING".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH 191.41277(1981).
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