PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING

CAS OpenIR > 中科院上海原子核所2003年前

	PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING
	DEUTCH, BI; TSOU, SC; LEOU, SH; ZHOU, ZY; ZENG, HJ; DAI, RZ; CHU, TC; CAO, DX（曹德新）
	1979
Source Publication	RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN	1042-0150
Volume	45 Issue:41276
Indexed By	SCI
Language	英语
Funding Project	原子核所项目组
WOS ID	WOS:A1979JK48800014
Citation statistics
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/12975
Collection	中科院上海原子核所2003年前
Recommended Citation GB/T 7714	DEUTCH, BI,TSOU, SC,LEOU, SH,et al. PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1979,45(41276).
APA	DEUTCH, BI.,TSOU, SC.,LEOU, SH.,ZHOU, ZY.,ZENG, HJ.,...&CAO, DX.(1979).PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING.RADIATION EFFECTS AND DEFECTS IN SOLIDS,45(41276).
MLA	DEUTCH, BI,et al."PULSED, Q-SWITCHED RUBY-LASER ANNEALING OF BI IMPLANTED SI CRYSTALS INVESTIGATED BY CHANNELING".RADIATION EFFECTS AND DEFECTS IN SOLIDS 45.41276(1979).

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