CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
Yang, Tieying; Qin, Xiubo; Wang, Huan-hua; Jia, Quanjie; Yu, Runsheng; Wang, Baoyi; Wang, Jiaou; Ibrahim, Kurash; Jiang, Xiaoming; He, Qing(何庆)
2010
Source PublicationTHIN SOLID FILMS
ISSN0040-6090
Volume518Issue:19Pages:5542
AbstractThe direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p-n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p-n homojunction diode was obtained. It exhibits a distinct current-voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications. (C) 2010 Elsevier B.V. All rights reserved.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000279885700035
Citation statistics
Cited Times:55[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13049
Collection中科院上海应用物理研究所2004-2010年
Recommended Citation
GB/T 7714
Yang, Tieying,Qin, Xiubo,Wang, Huan-hua,et al. Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films[J]. THIN SOLID FILMS,2010,518(19):5542.
APA Yang, Tieying.,Qin, Xiubo.,Wang, Huan-hua.,Jia, Quanjie.,Yu, Runsheng.,...&He, Qing.(2010).Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films.THIN SOLID FILMS,518(19),5542.
MLA Yang, Tieying,et al."Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films".THIN SOLID FILMS 518.19(2010):5542.
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